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NTR1P02LT3G

Part No NTR1P02LT3G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.3A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.25V @ 250μA
Max Gate Charge 5.5nC @ 4V
Max Input Capacitance 225pF @ 5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 400mW (Ta)
Maximum Rds On at Id,Vgs 220 mOhm @ 750mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1084003-NTR1P02LT3G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTR1P02LT3G CAD Model

Description

ON Semiconductor NTR1P02LT3G P-Channel MOSFET

The ON Semiconductor NTR1P02LT3G is a high-performance P-Channel MOSFET that offers a compact and efficient solution for a variety of electronic applications. With its small footprint and low on-resistance, this MOSFET is designed to deliver reliable performance for switching applications that require efficient power management.

Key Features

  • Device Type: P-Channel MOSFET
  • Configuration: Single
  • Drain-Source Voltage (V<sub>DS): -20V
  • Continuous Drain Current (I<sub>D): -1.7A
  • Power Dissipation (P<sub>D): 1.25W
  • R<sub>DS(on): 300 mOhms at V<sub>GS = -4.5V
  • Gate-Source Voltage (V<sub>GS): ±8V
  • Operating Temperature: -55°C to +150°C
  • Package: SOT-23 (TO-236)

Efficiency and Performance

The NTR1P02LT3G is designed for low threshold operation, making it suitable for low voltage applications. It has a low gate charge (Q<sub>G), which results in reduced switching losses and enhances the overall efficiency of the system. The MOSFET's low on-resistance ensures minimal power loss during operation, making it an ideal choice for power-sensitive designs.

Applications

This versatile MOSFET can be used in a variety of applications, including but not limited to:

  • Power Management Circuits
  • Battery Powered Systems
  • Load Switching
  • DC/DC Converters
  • Portable Devices
  • Motor Control Circuits

Reliability and Durability

The NTR1P02LT3G is built to endure harsh conditions and is characterized by its high reliability. With an extended operating temperature range, this MOSFET can withstand extreme environments, making it suitable for industrial and automotive applications where reliability is critical.

Environmental Compliance

ON Semiconductor is committed to environmental stewardship. The NTR1P02LT3G complies with RoHS and is free from lead and other environmentally hazardous substances. This commitment ensures that the product is not only high-performing but also environmentally friendly.

In summary, the ON Semiconductor NTR1P02LT3G P-Channel MOSFET is a robust, efficient, and versatile component that meets the needs of modern electronic designs requiring high performance in a compact package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
850+ $0.0590 $50.1500
1,810+ $0.0553 $100.0930
2,810+ $0.0534 $150.0540
4,025+ $0.0497 $200.0425
5,235+ $0.0478 $250.2330
6,540+ $0.0459 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,180 pieces
MOQ: 850 pcs
Order Increment : 1 pcs
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