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SI7139DP-T1-GE3

Part No SI7139DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 40A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 146nC @ 10V
Max Input Capacitance 4230pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Ta), 48W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096138-SI7139DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7139DP-T1-GE3 CAD Model

Description

The Vishay SI7139DP-T1-GE3 is a P-channel MOSFET designed for use in various discrete semiconductor products.

  • Maximum Power Dissipation: 5W (Ta) or 48W (Tc)
  • Drive Voltage: 4.5V (max Rds On) or 10V (min Rds On)
  • Technology: MOSFET
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 40A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 146nC @ 10V
  • Maximum Input Capacitance: 4230pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 5.5 mOhm @ 15A, 10V
  • Status: Active production
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0254 $61.5240
140+ $0.8415 $117.8100
215+ $0.8151 $175.2465
295+ $0.7889 $232.7255
380+ $0.7625 $289.7500
510+ $0.6837 $348.6870
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,011 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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