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Same model may have multiple batches, images only for reference.
FDY4001CZ Real Image
Same model may have multiple batches, images only for reference.

FDY4001CZ

Part No FDY4001CZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V SC89-6
Datasheet
FDY4001CZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 200mA, 150mA
Maximum Rds On at Id,Vgs 5 Ohm @ 200mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 1.1nC @ 4.5V
Max Input Capacitance 60pF @ 10V
Maximum Power Dissipation 446mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Win Source Part Number 1038496-FDY4001CZ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDY4001CZ CAD Model

Description

The FDY4001CZ is a logic-level gate N and P-channel FET type manufactured by Fairchild/ON Semiconductor that is perfect for use in various electronic devices.

  • Type: logic-level gate N and P-channel FET
  • Mounting: surface-mount device
  • Maximum Power Dissipation: 446mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 200mA @ 25°C and 150mA @ 150°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 1.1nC @ 4.5V
  • Packaging: SC-89-6
  • Used In: discrete semiconductor products
  • Popularity: medium popularity
  • Supply and Demand Status: balanced

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