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NVBG020N120SC1

Part No NVBG020N120SC1
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1200V 8.6A/98A D2PAK / N-Channel 1200 V 8.6A (Ta), 98A (Tc) 3.7W (Ta), 468W (Tc) Surface Mount D2PAK-7
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 8.6A (Ta) , 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 20 V
Vgs (Max) +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 2943 pF @ 800 V
Power Dissipation (Max) 3.7W (Ta) , 468W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab) , TO-263CA
Base Product Number NVBG020
Standard Package 800
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1337605-NVBG020N120SC1
Ultra Librarian 3D Model Ultra Librarian NVBG020N120SC1 CAD Model

Description

The NVBG020N120SC1 is a state-of-the-art silicon carbide (SiC) N-channel MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This power MOSFET is designed to meet the high-efficiency and high-power density requirements of modern power systems, making it an ideal component for a wide range of applications including electric vehicles, solar inverters, and industrial power supplies.

Key Features

  • High-Performance Material: The device is fabricated with advanced silicon carbide, which provides superior thermal conductivity and allows for higher temperature operation compared to standard silicon devices.
  • Low On-Resistance: With an R<sub>DS(on) of just 20 mΩ, the NVBG020N120SC1 ensures minimal power loss and higher efficiency in applications, leading to energy savings and reduced cooling requirements.
  • High Breakdown Voltage: The MOSFET boasts a 1200V drain-to-source breakdown voltage (V<sub>DS), making it suitable for high-voltage applications and providing a wide safety margin for design flexibility.
  • Fast Switching Speed: The device's fast switching capabilities reduce switching losses and improve performance in high-frequency power circuits.
  • Robust Body Diode: The MOSFET includes a rugged intrinsic body diode that can handle high surge currents without degradation, enhancing system reliability.

Applications

The NVBG020N120SC1 is versatile and can be used in various demanding applications, including:

  • Electric Vehicle (EV) Powertrain Systems
  • Energy Storage Systems
  • Solar Power Inverters
  • Uninterruptible Power Supplies (UPS)
  • Induction Heating
  • High Power Switch Mode Power Supplies (SMPS)

Reliability and Quality

ON Semiconductor is committed to providing high-quality products. The NVBG020N120SC1 is no exception and is designed to meet stringent industry standards for performance and reliability. Its superior material properties and construction ensure long-term stability and durability, even in harsh operating conditions.

For designers and engineers looking for a robust, high-efficiency power solution, the NVBG020N120SC1 from ON Semiconductor offers an exceptional balance of performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $37.4745 $74.9490
4+ $30.7483 $122.9932
6+ $29.7874 $178.7244
7+ $28.8265 $201.7855
9+ $27.8656 $250.7904
13+ $24.9830 $324.7790
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 88 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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