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NVD4813NHT4G

Part No NVD4813NHT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.6A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 10nC @ 4.5V
Max Input Capacitance 940pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.27W (Ta), 35.3W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1084100-NVD4813NHT4G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NVD4813NHT4G CAD Model

Description

Introducing the NVD4813NHT4G Power MOSFET by ON Semiconductor

The NVD4813NHT4G is a high-performance Power MOSFET brought to you by ON Semiconductor, a leading force in energy-efficient innovations. This robust semiconductor device is engineered to meet the rigorous demands of modern electronic circuits, providing efficient power management and control.

Key Features

  • Device Type: Power MOSFET
  • Technology: Trench
  • Package: DPAK (TO-252) for surface mount technology
  • Drain-to-Source Voltage (V<sub>DS): 30V
  • Continuous Drain Current (I<sub>D): 100A at 25°C
  • Power Dissipation (P<sub>D): 48W
  • R<sub>DS(on): Very low at 2.5mΩ typical, minimizing on-state losses
  • Operating Temperature Range: -55°C to 175°C
  • RoHS Compliant: Yes

Enhanced Performance

The NVD4813NHT4G is designed for high-efficiency power conversion applications. Its low on-resistance ensures minimal voltage drop across the device when conducting, thereby reducing heat generation and improving overall efficiency. The MOSFET's fast switching capabilities make it an ideal choice for high-speed switching applications, such as DC-DC converters, motor drives, and power management systems.

Reliability and Durability

ON Semiconductor's NVD4813NHT4G is built to last. It can withstand high continuous current and has a high tolerance for thermal stress, thanks to its maximum junction temperature of 175°C. The device is encapsulated in a rugged DPAK package, which provides excellent power density and allows for effective heat dissipation.

Environmental Compliance

ON Semiconductor is committed to environmental stewardship. The NVD4813NHT4G is RoHS compliant, ensuring that it meets the European Union's restrictions on the use of certain hazardous substances in electrical and electronic equipment. By choosing this MOSFET, customers are making an environmentally responsible decision without compromising on performance.

Applications

The versatility of the NVD4813NHT4G makes it suitable for a wide range of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor control systems
  • Automotive applications
  • High-efficiency power management solutions

With its exceptional performance, reliability, and compliance with environmental standards, the NVD4813NHT4G from ON Semiconductor stands out as a superior choice for designers seeking to optimize their power management systems.

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