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NVD5C434NT4G

Part No NVD5C434NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL 40V 163A DPAK / N-Channel 40 V 163A (Tc) 117W (Tc) Surface Mount DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 163A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 25 V
Power Dissipation (Max) 117W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab) , SC-63
Base Product Number NVD5C434
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1339019-NVD5C434NT4G
Ultra Librarian 3D Model Ultra Librarian NVD5C434NT4G CAD Model

Description

ON Semiconductor NVD5C434NT4G Overview

The NVD5C434NT4G is a state-of-the-art power MOSFET from ON Semiconductor, designed to deliver high efficiency and performance for a wide range of applications. This device is part of ON Semiconductor's portfolio of energy-efficient power management solutions, and it is specifically engineered to meet the demanding requirements of modern electronic circuits.

The NVD5C434NT4G is characterized by its low on-resistance and high switching speed, making it an ideal choice for power conversion and management tasks in various electronic devices. This MOSFET utilizes ON Semiconductor's advanced trench technology, which significantly reduces the on-state resistance while maintaining superior switching performance and thermal characteristics.

Key Features

  • Low On-Resistance: The device boasts an exceptionally low RDS(on), which minimizes conduction losses and improves overall efficiency.
  • High Current Capacity: With the ability to handle high continuous drain currents, the NVD5C434NT4G is suitable for applications requiring robust power handling capabilities.
  • Fast Switching Speed: The MOSFET's fast switching speed reduces switching losses and is beneficial for high-frequency power conversion applications.
  • Robust Thermal Performance: Enhanced thermal characteristics allow for better heat dissipation, contributing to the device's reliability and longevity.
  • Power Dissipation: The device is capable of high power dissipation, which is critical for maintaining stability and performance under varying load conditions.

Applications

The NVD5C434NT4G is versatile and can be used in a variety of applications, including:

  • DC/DC converters
  • Power supplies for computer systems
  • Motor control circuits
  • LED lighting solutions
  • Automotive electronics
  • Telecommunications infrastructure

ON Semiconductor's commitment to quality and performance is evident in the NVD5C434NT4G MOSFET. Its superior design, combined with cutting-edge technology, provides a reliable and efficient solution for power management challenges in contemporary electronic systems. Whether for industrial, automotive, or consumer electronics, the NVD5C434NT4G is a powerful component that engineers and designers can trust to deliver top-notch performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.3520 $50.2800
37+ $2.7503 $101.7611
57+ $2.6644 $151.8708
78+ $2.5784 $201.1152
101+ $2.4925 $251.7425
135+ $2.2347 $301.6845
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,600 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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