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NVMFD6H846NLWFT1G

Part No NVMFD6H846NLWFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET - POWER, DUAL N-CHANNEL,  /  Mosfet Array 2 N-Channel (Dual) 80V 9.4A (Ta), 31A (Tc) 3.2W (Ta), 34W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs 15mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2V @ 21µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 40V
Power - Max 3.2W (Ta), 34W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Base Product Number NVMFD6
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 488-NVMFD6H846NLWFT1GTR
Standard Package 1,500
Win Source Part Number 988157-NVMFD6H846NLWFT1G
Ultra Librarian 3D Model Ultra Librarian NVMFD6H846NLWFT1G CAD Model

Description

The ON Semiconductor NVMFD6H846NLWFT1G is a state-of-the-art power MOSFET designed to deliver high efficiency and performance for a wide range of applications. This advanced semiconductor device is part of ON Semiconductor's comprehensive portfolio of energy-efficient solutions, tailored to meet the demands of modern electronic systems.

Key Features

  • Low On-Resistance: The NVMFD6H846NLWFT1G boasts an exceptionally low on-resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall system efficiency.
  • High Current Capacity: With its ability to handle high currents, this MOSFET is suitable for demanding applications that require robust power handling capabilities.
  • Power-SO8 Package: The compact Power-SO8 package allows for a smaller footprint on the PCB, making it ideal for space-constrained applications without compromising on performance.
  • Thermal Management: Excellent thermal characteristics ensure reliable operation even under high temperature conditions, extending the lifespan of the device and the overall system.

Applications

The NVMFD6H846NLWFT1G is versatile enough to be used in a variety of applications, including but not limited to:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Computing and server power supplies
  • Automotive systems

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 30V Continuous Drain Current (I<sub>D) 30A Power Dissipation (P<sub>D) 48W Operating Temperature Range -55°C to +150°C

ON Semiconductor's NVMFD6H846NLWFT1G is engineered for those who require a high-performance MOSFET that does not compromise on efficiency or thermal management. Its robust design and advanced features make it an excellent choice for engineers looking to optimize their power designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3636 $54.5440
90+ $1.1189 $100.7010
140+ $1.0839 $151.7460
195+ $1.0490 $204.5550
250+ $1.0140 $253.5000
330+ $0.9091 $300.0030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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