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NVMFS2D3P04M8LT1G

Part No NVMFS2D3P04M8LT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MV8 P INITIAL PROGRAM / P-Channel 40 V 31A (Ta), 222A (Tc) 3.8W (Ta), 205W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Reel - TR
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 31A, 222A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.4V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5985 pF @ 20 V
Power Dissipation (Max) 3.8W, 205W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Case / Package 8-PowerTDFN, 5 Leads
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 488-NVMFS2D3P04M8LT1GDKR,488-NVMFS2D3P04M8LT1GTR,488-NVMFS2D3P04M8LT1GCT
Standard Package 1,500
Win Source Part Number 1323926-NVMFS2D3P04M8LT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS2D3P04M8LT1G CAD Model

Description

ON Semiconductor NVMFS2D3P04M8LT1G Overview

The NVMFS2D3P04M8LT1G is a high-performance, Power MOSFET product from ON Semiconductor, designed for a wide range of applications that demand high efficiency and power density. This MOSFET utilizes ON Semiconductor's advanced technology to provide an optimal solution for power management tasks in automotive, industrial, and consumer electronic devices.

Key Features

  • Low On-Resistance: The MOSFET features a low on-resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency, making it suitable for high-efficiency power supplies and converters.
  • High Switching Speed: With fast switching capabilities, the NVMFS2D3P04M8LT1G can handle high-frequency operations, reducing the size of passive components and enabling compact circuit designs.
  • Power Dissipation: Its robust design allows for significant power dissipation, ensuring reliable operation under a wide range of conditions.
  • Thermal Management: The package is engineered for excellent thermal performance, ensuring the device operates within its temperature range even under high load conditions.

Applications

  • Automotive applications such as high-efficiency DC/DC converters, motor drives, and LED lighting
  • Power supply units for consumer electronics, including desktops, laptops, and gaming consoles
  • Industrial power systems, including robotics, automation, and renewable energy inverters
  • Telecommunication equipment power management

The NVMFS2D3P04M8LT1G from ON Semiconductor stands out for its robustness and efficiency. Its compact footprint and high-performance characteristics make it an excellent choice for designers looking to improve power density and efficiency in their applications. With ON Semiconductor's commitment to quality and reliability, this MOSFET is a dependable component for any power management system.

Overall, the NVMFS2D3P04M8LT1G MOSFET is a testament to ON Semiconductor's innovation in providing solutions that meet the evolving demands of modern electronics, offering both performance and reliability for a multitude of power applications.

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