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Same model may have multiple batches, images only for reference.
IRFP3006PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFP3006PBF

Part No IRFP3006PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 257A TO247
Datasheet
IRFP3006PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 300nC @ 10V
Max Input Capacitance 8970pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 170A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 1046985-IRFP3006PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFP3006PBF CAD Model

Description

The IRFP3006PBF is an N-channel MOSFET designed for high power applications.

  • Maximum Power Dissipation: 375W @ Tc
  • Continuous Drain Current: 195A @ 25°C
  • Package: Through-hole TO-247AC
  • Mounting: Tube/rail
  • Maximum Drain-Source Breakdown Voltage: 60V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Input Capacitance: 8970pF @ 50V
  • Maximum Gate Charge: 300nC @ 10V
  • RoHS Compliant: Yes
  • ECCN: EAR99
  • Manufacturer: Infineon Technologies

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172+ $2.0178 $347.0616
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