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NVMFS5C430NLWFAFT1G

Part No NVMFS5C430NLWFAFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 38A/200A 5DFN / N-Channel 40 V 38A (Ta), 200A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 38A (Ta), 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 20 V
Power Dissipation (Max) 3.8W (Ta), 110W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,500
Win Source Part Number 1082951-NVMFS5C430NLWFAFT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS5C430NLWFAFT1G CAD Model

Description

The ON Semiconductor NVMFS5C430NLWFAFT1G is a high-performance, Power MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This MOSFET is part of ON Semiconductor's extensive portfolio of semiconductor components known for their reliability and cutting-edge technology.

Key Features

  • Low On-Resistance: The NVMFS5C430NLWFAFT1G features a very low on-resistance (RDS(on)), which minimizes conduction losses and enhances efficiency, making it ideal for high-efficiency power supplies.
  • High Current Capability: With its ability to handle high continuous drain currents, this MOSFET is suitable for demanding applications that require robust current handling capacity.
  • Single N-Channel: As a single N-channel MOSFET, it offers simple drive requirements and is commonly used in a variety of switching applications.
  • Power Trench® Technology: ON Semiconductor's proprietary Power Trench technology is utilized in this MOSFET to optimize the balance between on-resistance and capacitance, which results in improved switching performance.
  • High Thermal Performance: The device is designed with a focus on thermal management, ensuring stability and reliability even under high temperature conditions.

Applications

The NVMFS5C430NLWFAFT1G is versatile and can be used in various applications, including:

  • DC/DC Converters
  • Power Supply Modules
  • Motor Drives
  • Automotive Systems
  • Computing and Server Applications
  • Power Management Circuits

Product Specifications

Parameter Value
Drain-to-Source Voltage (VDSS) 40V
Continuous Drain Current (ID) 300A
Power Dissipation (PD) 125W
Operating Temperature Range -55°C to 150°C
Package 5x6mm Flat-Lead

With its robust design and superior performance, the ON Semiconductor NVMFS5C430NLWFAFT1G stands out as a reliable choice for engineers and designers looking to enhance the efficiency and longevity of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ €1.1382 €56.9118
115+ €0.9340 €107.4076
175+ €0.9049 €158.3536
240+ €0.8756 €210.1426
310+ €0.8464 €262.3845
415+ €0.7589 €314.9497
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,500 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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