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NVMFS5C645NLT1G

Part No NVMFS5C645NLT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 22A/100A 5DFN  /  N-Channel 60 V 22A (Ta), 100A (Tc) 3.7W (Ta), 79W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 50 V
Power Dissipation (Max) 3.7W (Ta), 79W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2832-NVMFS5C645NLT1G-488
Standard Package 1,500
Win Source Part Number 1082956-NVMFS5C645NLT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS5C645NLT1G CAD Model

Description

ON Semiconductor NVMFS5C645NLT1G - Power MOSFET

The NVMFS5C645NLT1G is a high-performance, single N-channel Power MOSFET from ON Semiconductor, designed to meet a wide range of power management and switching applications. This device is part of ON Semiconductor's comprehensive portfolio of energy-efficient power MOSFETs and is optimized for fast switching performance and low on-resistance, making it an ideal choice for efficient power conversion in modern electronic systems.

With a maximum V<sub>DS (Drain-Source Voltage) of 100V and a continuous drain current (I<sub>D) of 31A at 25°C, this MOSFET is capable of handling high-power applications while maintaining a low thermal footprint. The NVMFS5C645NLT1G also features a low R<sub>DS(on) (Drain-Source On-Resistance) of 5.8 mΩ at V<sub>GS = 10 V, which translates to reduced conduction losses and improved overall efficiency.

Designed with advanced silicon technology, the NVMFS5C645NLT1G offers superior switching performance. Its fast switching speed is complemented by a robust body diode that can handle high-speed switching environments. The MOSFET comes in a compact, surface-mountable 5x6mm² DFN8 package with a low profile and small footprint, making it suitable for space-constrained applications.

ON Semiconductor's NVMFS5C645NLT1G is also characterized by its low gate charge (Q<sub>G), which minimizes the switching losses and allows for the use of smaller and more efficient drivers. This feature, along with the device's low intrinsic capacitance, contributes to its high-speed switching capabilities.

The device is RoHS compliant and halogen-free, ensuring that it meets environmental standards and is suitable for use in green electronics. The NVMFS5C645NLT1G is typically used in applications such as DC-DC converters, motor drives, power supply modules, and other high-efficiency power management systems.

Overall, the ON Semiconductor NVMFS5C645NLT1G Power MOSFET is a reliable and efficient solution for designers looking to improve power density and efficiency in their applications while maintaining a high level of performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $20.1698 $60.5094
7+ $16.5500 $115.8500
11+ $16.0326 $176.3586
15+ $15.5151 $232.7265
20+ $14.9988 $299.9760
26+ $13.4465 $349.6090
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,730 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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