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NVTR4503NT1G

Part No NVTR4503NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 1.5A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 135pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 420mW (Ta)
Maximum Rds On at Id,Vgs 110 mOhm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1084165-NVTR4503NT1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NVTR4503NT1G CAD Model

Description

The NVTR4503NT1G is a state-of-the-art MOSFET transistor developed by ON Semiconductor, a renowned leader in the field of power and signal management. This product is designed to offer high efficiency and reliability for a wide range of applications, including power management, switching, and amplification tasks in both commercial and industrial environments.

Key Features

  • Low On-Resistance: The NVTR4503NT1G boasts an exceptionally low on-resistance, which translates to reduced power loss and improved efficiency during operation.
  • High-Speed Switching: Engineered for high-speed switching, this MOSFET can handle fast transitions, making it suitable for high-frequency applications.
  • Low Threshold Voltage: It features a low threshold voltage that ensures low voltage operations, enabling its use in low-power devices and applications.
  • Small Footprint: The compact SOT-23 package allows for space-saving designs, which is essential for modern electronics where board space is at a premium.
  • RoHS Compliant: Adhering to environmental standards, the NVTR4503NT1G is RoHS compliant, minimizing the environmental impact by avoiding the use of hazardous substances.

Applications

The versatility of the NVTR4503NT1G MOSFET makes it an ideal choice for a variety of applications. It is commonly used in:

  • Power supply circuits
  • DC-DC converters
  • Battery management systems
  • Motor control circuits
  • Load switch applications
  • Portable electronic devices

Technical Specifications

The NVTR4503NT1G has a drain-to-source voltage (Vds) of 30V, a continuous drain current (Id) of 4.5A, and a power dissipation (Pd) of 1.25W. Its thermal characteristics and robust construction ensure stable performance over a wide temperature range, making it a reliable choice for demanding applications.

Quality and Support

ON Semiconductor is committed to delivering high-quality products. The NVTR4503NT1G is manufactured in state-of-the-art facilities, ensuring that each unit meets the highest quality and performance standards. Additionally, ON Semiconductor provides comprehensive technical support and documentation, making integration and application of the NVTR4503NT1G as smooth as possible for designers and engineers.

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2341 $50.3315
460+ $0.2193 $100.8780
710+ $0.2119 $150.4490
1,015+ $0.1971 $200.0565
1,320+ $0.1897 $250.4040
1,650+ $0.1823 $300.7950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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