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P2N2907ARL1G

Part No P2N2907ARL1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 0.6A TO-92
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 1.6V @ 50mA, 500mA
Collector Cut-off Current(Max) 10nA
Typical Gain (hFE) (Min) 100 @ 150mA, 10V
Maximum Power Dissipation 625mW
Frequency - Transition 200MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Win Source Part Number 060979-P2N2907ARL1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian P2N2907ARL1G CAD Model

Description

ON Semiconductor P2N2907ARL1G - General Purpose PNP Transistor

The ON Semiconductor P2N2907ARL1G is a versatile PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This semiconductor device is a part of the epitaxial planar transistor series that offers a balanced combination of features making it suitable for a wide array of uses in commercial, industrial, and educational environments.

Key Features:

  • Transistor Polarity: PNP - This indicates that the charge carriers in the P2N2907ARL1G are primarily holes, which makes it suitable for use in positive ground circuits.
  • Collector-Emitter Voltage (VCEO): 60V - The maximum voltage between the collector and emitter at which the transistor can operate without breakdown.
  • Collector Base Voltage (VCBO): 60V - The maximum collector-base voltage, ensuring reliable operation when the emitter is open.
  • Emitter Base Voltage (VEBO): 5V - This is the maximum voltage the emitter-base junction can tolerate without sustaining damage.
  • Collector Current (IC): 600 mA - The transistor can handle a substantial amount of current, making it suitable for driving moderate loads.
  • Power Dissipation (Pd): 625 mW - The amount of power the P2N2907ARL1G can dissipate without exceeding its maximum operating temperature.
  • DC Current Gain (hFE): 100 to 300 - A measure of the transistor's amplification factor, indicating its efficiency in amplifying a signal.
  • Package / Case: TO-92 - A widely used through-hole package that is easy to handle and integrate into various circuit designs.

Applications:

The P2N2907ARL1G is used in a variety of electronic applications due to its reliable performance and general-purpose nature. It can be found in:

  • Signal amplification circuits
  • Switching devices
  • Linear amplification stages
  • Audio amplifiers
  • Power management solutions
  • Various DIY electronics projects

ON Semiconductor's commitment to quality ensures that the P2N2907ARL1G transistor meets the requirements for consistent performance and reliability. Whether for educational purposes, prototyping, or commercial product development, this component provides a cost-effective solution for a multitude of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,725+ $0.0335 $57.7875
4,170+ $0.0277 $115.5090
6,525+ $0.0266 $173.5650
9,095+ $0.0254 $231.0130
11,905+ $0.0243 $289.2915
15,790+ $0.0219 $345.8010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 1725 pcs
Order Increment : 1 pcs
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