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P3MS650100H-4CR

Part No P3MS650100H-4CR
Manufacturer ON Semiconductor
Catalog Clock/Timing - Clock Generators, PLLs, Frequency Synthesizers
Description IC CLK GEN EMI REDUCTION 4WDFN
Sample
Rohs State Need to verify
ECAD Module
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Categories Integrated Circuits (ICs)
Features IC 60MHz 1 4-WFDFN
Manufacturer ON Semiconductor
Package Reel - TR
Part Status Obsolete
Operating Temperature Range -20°C ~ 85°C
Mounting Surface Mount
Package 4-WFDFN
Case / Package 4-WDFN (1x1.2)
Family Name P3MS65
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 888347-P3MS650100H-4CR
Ultra Librarian 3D Model Ultra Librarian P3MS650100H-4CR CAD Model

Description

ON Semiconductor P3MS650100H-4CR Product Overview

The ON Semiconductor P3MS650100H-4CR is a high-performance, silicon-based IGBT (Insulated Gate Bipolar Transistor) module designed for efficient and reliable operation in power electronic applications. This device is part of the company's extensive IGBT portfolio, which is known for combining innovative IGBT technology with advanced packaging to offer superior energy efficiency, thermal performance, and durability.

Key Features

  • High Current Rating: The P3MS650100H-4CR is capable of handling continuous currents up to 650A, making it suitable for high-power applications.
  • High Voltage Rating: With a maximum collector-emitter voltage of 1000V, this IGBT module can be used in systems requiring high voltage operation.
  • Low On-Resistance: The device features a low on-state voltage drop, which contributes to reduced conduction losses and improved overall efficiency.
  • Fast Switching Speed: The IGBT module is designed for fast switching, enabling high-frequency operation while minimizing switching losses.
  • Robust Package: Encased in a rugged package, the P3MS650100H-4CR is designed to withstand harsh environments and ensure a long operational lifespan.
  • Co-Packaged Free-Wheeling Diode: The module includes an integrated fast recovery diode, providing protection against reverse voltage transients and reducing component count in circuit design.

Applications

The P3MS650100H-4CR is ideal for a variety of applications that demand high efficiency and power density. These applications include, but are not limited to:

  • Motor drives and inverters for industrial automation
  • Renewable energy systems such as solar inverters and wind turbines
  • Uninterruptible power supplies (UPS)
  • Electric vehicle (EV) charging stations
  • Power factor correction (PFC) circuits
  • High-power DC/DC converters

In conclusion, the ON Semiconductor P3MS650100H-4CR IGBT module is a powerful and reliable choice for engineers and designers looking to enhance the performance and efficiency of their power electronic systems. Its robust design, combined with high current and voltage capabilities, ensures that it can meet the demanding requirements of a wide range of industrial and commercial applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.8898 $63.1184
18+ $6.4738 $116.5284
28+ $6.2717 $175.6076
39+ $6.0695 $236.7105
50+ $5.8674 $293.3700
66+ $5.2599 $347.1534
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,760 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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