The SBC807-16LT3G from ON Semiconductor is a high-performance, PNP Silicon Bipolar Transistor that is designed to offer a blend of reliability and efficiency for a wide range of applications. This semiconductor device is particularly suited for use in low power and medium voltage applications, making it a versatile component for designers and engineers.

Key Features

• PNP Bipolar Transistor: The SBC807-16LT3G is a PNP transistor, which means it is turned on or off by the movement of holes as the charge carriers in the device.
• Low V<sub>CE(sat): The transistor offers a low collector-emitter saturation voltage, which results in reduced power loss and improved efficiency during operation.
• High Current Gain Bandwidth Product: It provides a high current gain bandwidth (f<sub>T) product, making it suitable for amplification of analog signals.
• Medium Voltage Capability: With a collector-emitter voltage (V<sub>CEO) of 45 V, it can handle moderate voltage applications with ease.
• Lead Formed for Surface Mount: The SBC807-16LT3G comes in a package that is lead formed for surface mount technology (SMT), enabling easier assembly and miniaturization of PCB designs.
• Pb-Free and RoHS Compliant: The product is lead-free and complies with the RoHS directive, making it environmentally friendly and suitable for use in a variety of markets worldwide.

Applications

The SBC807-16LT3G is ideal for a range of electronic applications. Its high current gain and low saturation voltage make it suitable for use in switch mode power supplies (SMPS), battery management, and power regulation circuits. Additionally, its medium voltage capability allows it to be used in driver stages in audio amplifiers, signal processing, and in various control systems requiring PNP transistors.

Product Specifications

Parameter Value Configuration Single Collector-Emitter Voltage V<sub>CEO 45 V Collector-Base Voltage V<sub>CBO 50 V Emitter-Base Voltage V<sub>EBO 5 V Collector Current - Continuous I<sub>C 800 mA Power Dissipation P<sub>D 225 mW DC Current Gain h<sub>FE (Min) 120 at 100 mA Operating and Storage Junction Temperature Range T<sub>j, T<sub>stg -55 to +150 °C

The SBC807-16LT3G is a testament to ON Semiconductor's commitment to providing innovative solutions that meet the evolving needs of the electronics industry, offering performance and reliability in a compact, surface-mount package.