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SBC847BPDXV6T1G

Part No SBC847BPDXV6T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 45V 0.1A SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 49 Weeks
Features Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 357mW Surface Mount SOT-563
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package SOT-563, SOT-666
Case / Package SOT-563
Family Name SBC847
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number SBC847BPDXV6T1GOSDKR, SBC847BPDXV6T1G-ND, SBC847BPDXV6T1GOSCT, SBC847BPDXV6T1GOSTR
Quantity per package 4000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 893632-SBC847BPDXV6T1G
Ultra Librarian 3D Model Ultra Librarian SBC847BPDXV6T1G CAD Model

Description

The SBC847BPDXV6T1G from ON Semiconductor is a high-performance, NPN bipolar (BJT) transistor designed to offer a balanced combination of features suitable for a wide range of applications. This small-signal transistor is ideal for use in linear and switching applications, providing designers with a versatile component that meets various circuit requirements.

Key Features

  • Transistor Type: NPN - This transistor is an NPN type, meaning it is controlled by the flow of negative charge carriers (electrons).
  • Current - Collector (Ic) (Max): 100mA - The maximum collector current rating indicates the transistor can handle a continuous current of up to 100mA.
  • Voltage - Collector Emitter Breakdown (Max): 50V - The collector-emitter breakdown voltage is a measure of the transistor's ability to withstand voltage across its terminals without breaking down.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V - The DC current gain is a crucial parameter that indicates the amplification capability of the transistor at a given collector current and collector-emitter voltage.
  • Power - Max: 200mW - The maximum power dissipation of the transistor, indicating the amount of power it can handle before it overheats.
  • Frequency - Transition: 100MHz - The transition frequency denotes the maximum operating frequency at which the transistor can amplify a signal.
  • Operating Temperature: -55°C ~ 150°C - The transistor can operate within a wide temperature range, making it suitable for various environmental conditions.
  • Mounting Type: Surface Mount - This component is designed for surface mounting, which allows for a more compact and efficient PCB design.
  • Package / Case: TO-236-3, SC-59, SOT-23-3 - The transistor is housed in a small and reliable package that ensures stability and durability.

Applications

The SBC847BPDXV6T1G transistor is versatile enough to be used in numerous applications, including but not limited to:

  • Signal amplification
  • Switching circuits
  • Audio amplifiers
  • Driver stages in hi-fi amplifiers and television circuits
  • Control systems

With its robust performance specifications and compact form factor, the SBC847BPDXV6T1G is a reliable choice for designers looking to create efficient and durable electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1460 $50.3700
835+ $0.1198 $100.0330
1,295+ $0.1161 $150.3495
1,785+ $0.1123 $200.4555
2,305+ $0.1086 $250.3230
3,085+ $0.0974 $300.4790
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,900 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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