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MC1413DR2G

Part No MC1413DR2G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description Trans Darlington NPN 50V 0.5A 16-Pin SOIC T/R / TRANS 7NPN DARL 50V 0.5A 16SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 7 NPN Darlington
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 1.6V @ 500μA, 350mA
Typical Gain (hFE) (Min) 1000 @ 350mA, 2V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 16-SOIC
Win Source Part Number 022584-MC1413DR2G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name MC1413D
Introduction Date January 15, 1997
ECCN EAR99
Country of Origin China, Philippines , United States of America
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian MC1413DR2G CAD Model

Description

ON Semiconductor MC1413DR2G High Voltage, High Current Darlington Transistor Array

The ON Semiconductor MC1413DR2G is a versatile and robust integrated circuit that features a seven-channel Darlington transistor array. This high-voltage, high-current component is designed to cater to a wide array of applications that require driving inductive loads such as relays, solenoids, stepper motors, and other high-current or high-voltage loads. The MC1413DR2G is a direct replacement for the ULN2003A series and is compatible with TTL, CMOS, PMOS, and logic levels of 5V to 15V.

Each channel in the MC1413DR2G is comprised of a Darlington pair, which means that two bipolar transistors are connected in such a way that the current amplified by the first is amplified further by the second. This configuration provides a high current gain, allowing for the control of heavy loads with very small input currents. The output of each channel can sink up to 500 mA, making it suitable for a wide range of power applications.

The device is equipped with integral suppression diodes for inductive load transient suppression, which enhances the protection against voltage spikes that occur when driving inductive loads. This feature significantly improves the reliability and longevity of the device by safeguarding it against potential damage caused by such transients.

ON Semiconductor has packaged the MC1413DR2G in a SOIC-16 package, ensuring a compact footprint that is ideal for space-constrained applications. The operating temperature range of the device spans from -40°C to 85°C, allowing for its use in various environmental conditions.

Key features of the MC1413DR2G include:

  • Seven Darlingtons per package
  • Output current 500 mA per channel
  • Output voltage 50V
  • Integral suppression diodes for inductive loads
  • Inputs compatible with various types of logic
  • Pin-compatible with ULN2003A series

This high-quality Darlington transistor array from ON Semiconductor is an excellent choice for designers who require a reliable solution for driving high-power loads with low input power in their electronic circuits. The MC1413DR2G offers a combination of high performance, versatility, and ease of integration, making it a valuable component for a diverse range of electronic projects and commercial products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
230+ $0.2188 $50.3240
560+ $0.1795 $100.5200
865+ $0.1739 $150.4235
1,190+ $0.1683 $200.2770
1,540+ $0.1627 $250.5580
2,060+ $0.1459 $300.5540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,400 pieces
MOQ: 230 pcs
Order Increment : 1 pcs
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