ON Semiconductor SBCP56-16T1G-IR01 Bipolar Transistor

The SBCP56-16T1G-IR01 is a high-performance bipolar transistor from ON Semiconductor, designed to meet the needs of a wide range of applications that require efficient power control and amplification. This PNP transistor is a reliable component for designers who are looking to create circuits with high switching speeds and moderate power handling capabilities.

Key Features:

• Type: PNP Bipolar Transistor
• Collector-Emitter Voltage (Vceo): 80V
• Collector Current (Ic): 1A
• DC Current Gain (hFE): 160 minimum at Ic = 100 mA
• Power Dissipation (Pd): 1.25W
• Operating and Storage Junction Temperature Range: -55°C to +150°C
• Package: SOT-223
• RoHS: Compliant

The SBCP56-16T1G-IR01 offers a collector-emitter voltage of 80V, which allows it to handle higher voltage applications while maintaining a collector current of up to 1A. The device is characterized by a high DC current gain (hFE) of 160 minimum at a collector current of 100 mA, which ensures amplification efficiency in various circuit configurations.

With a power dissipation capacity of 1.25W, this transistor can manage moderate levels of power without compromising performance. The operating and storage junction temperature range of -55°C to +150°C guarantees stability and reliability across a broad spectrum of environmental conditions, making it suitable for industrial and consumer applications alike.

Housed in a compact SOT-223 package, the SBCP56-16T1G-IR01 is not only space-efficient but also easy to integrate into PCB designs. Its RoHS compliance ensures that it meets the latest environmental standards, making it a responsible choice for eco-conscious designs.

Whether you are designing power management systems, amplifiers, or switch circuits, the ON Semiconductor SBCP56-16T1G-IR01 bipolar transistor is an excellent choice for delivering consistent performance with high reliability.