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SBT80-10Y-DL-E

Part No SBT80-10Y-DL-E
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description DIODE ARRAY SCHOTTKY 100V SMPFD
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Diode Configuration 1 Pair Common Cathode
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) (per Diode) 8A
Voltage - Forward (Vf) (Max) @ If 800mV @ 3A
Speed(Frequency) Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr 100μA @ 50V
Operating Temperature - Junction -55°C to 150°C
Mounting SMD (SMT)
Case / Package SMP-FD
Win Source Part Number 064128-SBT80-10Y-DL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SBT80-10Y-DL-E CAD Model

Description

The SBT80-10Y-DL-E is a high-performance, energy-efficient silicon carbide (SiC) Schottky barrier diode designed by ON Semiconductor, a leader in semiconductor solutions. This diode is engineered to deliver superior switching performance and higher reliability compared to traditional silicon devices. With its cutting-edge SiC technology, the SBT80-10Y-DL-E is an ideal choice for a wide range of power applications.

Key Features

  • Voltage Rating: The SBT80-10Y-DL-E features a reverse voltage rating of 800V, making it suitable for high-voltage applications.
  • Current Capacity: With a forward current rating of 10A, this diode can handle significant power levels, ideal for demanding environments.
  • Low Forward Voltage Drop: The device offers a low forward voltage drop, which results in reduced power losses and improved system efficiency.
  • High Switching Speed: The fast switching capability of the SBT80-10Y-DL-E minimizes energy loss during power conversion and improves the performance of power circuits.
  • Zero Reverse Recovery Time: The absence of reverse recovery time in this SiC Schottky diode reduces switching losses and enhances the efficiency of power converters.
  • Temperature Resilience: Capable of operating at high temperatures, the SBT80-10Y-DL-E maintains its performance even under thermal stress, ensuring reliability in harsh conditions.

Applications

The SBT80-10Y-DL-E is well-suited for a variety of applications where efficiency and high-speed switching are critical. These include:

  • Power supply units
  • Solar inverters
  • Electric vehicle (EV) charging stations
  • Power factor correction (PFC) circuits
  • Uninterruptible power supplies (UPS)

Quality and Reliability

ON Semiconductor is committed to delivering products of the highest quality and reliability. The SBT80-10Y-DL-E is no exception, with its robust design and rigorous testing ensuring consistent performance and longevity. This diode is a testament to ON Semiconductor's dedication to providing advanced solutions that meet the evolving needs of the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.8716 $69.3580
11+ $11.3814 $125.1954
16+ $11.0256 $176.4096
22+ $10.6699 $234.7378
28+ $10.3142 $288.7976
38+ $9.2481 $351.4278
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Availability: 3,000 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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