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SMMBT2907ALT3G

Part No SMMBT2907ALT3G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 600MA SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 300 mW Surface Mount SOT-23-3 (TO-236)
Manufacturer ON Semiconductor
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-236-3, SC-59, SOT-23-3
Case / Package SOT-23-3 (TO-236)
Family Name SMMBT2907
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number SMMBT2907ALT3GOSDKR, SMMBT2907ALT3G-ND, SMMBT2907ALT3GOSCT, SMMBT2907ALT3GOSTR
Quantity per package 10000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 896256-SMMBT2907ALT3G
Ultra Librarian 3D Model Ultra Librarian SMMBT2907ALT3G CAD Model

Description

ON Semiconductor SMMBT2907ALT3G PNP Transistor

The ON Semiconductor SMMBT2907ALT3G is a high-quality PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This versatile electronic component is a fundamental building block in various circuits and is widely appreciated for its reliability and performance.

Key Features:

  • Type: PNP Bipolar Junction Transistor (BJT)
  • Package: SOT-23 Surface-Mount
  • Collector-Emitter Voltage (VCEO): 60V
  • Collector-Base Voltage (VCBO): 60V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 600 mA
  • Power Dissipation (Pd): 225 mW
  • DC Current Gain (hFE): 100 to 300
  • Operating and Storage Junction Temperature Range: -55 to +150 °C

The SMMBT2907ALT3G transistor is housed in a compact SOT-23 package, making it suitable for space-constrained applications. Its surface-mount design allows for efficient assembly in automated production lines, promoting consistency and high-throughput manufacturing.

This component is capable of handling a collector current of up to 600 mA, which, combined with its collector-emitter voltage rating of 60V, makes it suitable for moderate power applications. The device also features a collector-base voltage of 60V and an emitter-base voltage of 5V, providing a good safety margin for a wide range of circuit designs.

With a DC current gain (hFE) range of 100 to 300, the SMMBT2907ALT3G ensures consistent amplification across different units, making it a reliable choice for amplification purposes. Its power dissipation capability of 225 mW allows it to manage a moderate amount of power without overheating, provided that proper thermal management practices are observed.

ON Semiconductor's commitment to quality is evident in the SMMBT2907ALT3G, as it is designed to operate within a broad temperature range of -55 to +150 °C, ensuring stability and performance under varying environmental conditions. This transistor is ideal for designers looking for a general-purpose PNP solution that offers a balance of performance, power handling, and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
950+ $0.0527 $50.0650
2,030+ $0.0493 $100.0790
3,155+ $0.0476 $150.1780
4,525+ $0.0442 $200.0050
5,885+ $0.0425 $250.1125
7,355+ $0.0408 $300.0840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,000 pieces
MOQ: 950 pcs
Order Increment : 1 pcs
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