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SMMUN2113LT1G

Part No SMMUN2113LT1G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PREBIAS PNP 50V SOT23-3 / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 246 mW
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number SMMUN2113
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names SMMUN2113LT1GOSDKR,2156-SMMUN2113LT1G-OS,SMMUN2113LT1GOSTR,ONSONSSMMUN2113LT1G,SMMUN2113LT1GOSCT,SMMUN2113LT1G-ND
Standard Package 3,000
Win Source Part Number 969388-SMMUN2113LT1G
Ultra Librarian 3D Model Ultra Librarian SMMUN2113LT1G CAD Model

Description

ON Semiconductor SMMUN2113LT1G

The SMMUN2113LT1G is a high-performance PNP bipolar transistor from ON Semiconductor, a leading provider of semiconductor-based solutions. This device is designed to deliver efficient current amplification and switching capabilities, making it an ideal component for a wide range of electronic applications, including signal processing, power management, and general-purpose amplification tasks.

The SMMUN2113LT1G boasts a collector-emitter voltage (VCEO) of -50V, ensuring it can handle moderate voltage applications with ease. Its collector current rating of -1A makes it suitable for driving medium-power loads. The device also features a collector-base voltage (VCBO) of -60V and an emitter-base voltage (VEBO) of -5V, providing a good safety margin for various circuit designs.

This transistor comes in a small SOT-23 surface-mount package, which is highly appreciated for its space-saving footprint on printed circuit boards (PCBs). The compact size of the SMMUN2113LT1G makes it an excellent choice for applications where board space is at a premium, such as in portable electronics, wearable devices, and compact power modules.

The SMMUN2113LT1G also offers low saturation voltage, which enhances its efficiency by minimizing power loss during operation. This characteristic is particularly beneficial in battery-powered devices where power conservation is crucial. Additionally, its fast switching speed enables the transistor to operate effectively in high-frequency circuits, contributing to improved overall performance of the electronic system.

ON Semiconductor has designed the SMMUN2113LT1G with reliability in mind. It is characterized for operation from -55°C to +150°C, allowing it to perform in a wide range of environmental conditions. This robust operating temperature range ensures that the device can sustain its performance even under harsh conditions, making it a reliable choice for industrial and automotive applications.

In summary, the SMMUN2113LT1G from ON Semiconductor is a versatile PNP bipolar transistor that offers a blend of power handling, efficiency, and compactness. Its robust design and electrical characteristics make it suitable for various applications, ensuring reliable operation in both standard and demanding environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
685+ $0.0847 $58.0195
1,665+ $0.0695 $115.7175
2,575+ $0.0674 $173.5550
3,550+ $0.0651 $231.1050
4,580+ $0.0631 $288.9980
6,135+ $0.0565 $346.6275
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 685 pcs
Order Increment : 1 pcs
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