The SMMUN2213LT1G from ON Semiconductor is a high-performance bipolar transistor that offers a blend of efficiency and reliability for a wide array of electronic applications. This PNP transistor is designed for general-purpose amplifier and switching applications, making it a versatile component for both commercial and industrial use.

Key Features

• Transistor Polarity: PNP - This means the transistor uses holes as the majority charge carriers, suitable for positive signal amplification.
• Collector-Emitter Voltage (VCEO): 50V - It can handle moderate voltage applications, allowing for a range of uses in circuit designs.
• Collector Current (IC): 800mA - The transistor can control a substantial amount of current, making it robust for various electrical tasks.
• Power Dissipation (Pd): 225mW - This specification indicates the amount of power the transistor can dissipate without damage, ensuring longevity and stable performance.
• DC Current Gain (hFE): 100 to 300 - High current gain implies efficient current amplification, making it ideal for signal processing tasks.
• Operating Temperature Range: -55°C to +150°C - A wide temperature range ensures reliability and performance under extreme conditions.
• Package/Case: SOT-23-3 - The compact surface-mount package allows for efficient use of PCB space and is suitable for automated assembly processes.

Applications

The SMMUN2213LT1G is a versatile component that can be used in various applications, including:

• Signal amplification in audio and video equipment
• Power management in portable devices
• Switching operations in consumer electronics
• Linear amplification in telecommunications systems
• Control systems in automotive technologies

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the SMMUN2213LT1G is no exception. Each transistor is manufactured to meet stringent quality standards, ensuring consistent performance and durability. The device is also RoHS compliant, reflecting ON Semiconductor's dedication to environmental responsibility.