ON Semiconductor SMMUN2213LT3G - NPN Transistor

The SMMUN2213LT3G from ON Semiconductor is a versatile and efficient NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This high-performance transistor is housed in a compact SOT-23 surface-mount package, making it ideal for space-constrained applications. The SMMUN2213LT3G is engineered to deliver consistent performance and reliability, which are hallmarks of ON Semiconductor's product offerings.

Key Features

• Transistor Polarity: NPN - Suitable for a wide range of applications including amplification and switching.
• Collector-Emitter Voltage (Vceo): 40V - Provides a good balance between breakdown voltage and power dissipation, enabling operation in various circuits.
• Collector Current (Ic): 0.6A - Capable of handling moderate current loads, making it suitable for driving small motors or LEDs.
• DC Current Gain (hFE): 100 to 300 - Ensures sufficient amplification in signal processing applications.
• Power Dissipation (Pd): 225mW - Adequate for low to medium power applications, helping to prevent overheating.
• Operating Temperature Range: -55°C to +150°C - Guarantees stable operation across a wide range of environmental conditions.
• Package: SOT-23 - A small footprint package that is ideal for use in compact designs.

Applications

With its robust specifications, the SMMUN2213LT3G is suitable for a variety of applications. It is commonly used in linear amplification and switching applications, including but not limited to:

• Audio amplifiers
• Signal processing
• Power management circuits
• Motor control circuits
• Consumer electronics
• Telecommunication devices

ON Semiconductor's commitment to quality ensures that the SMMUN2213LT3G transistor meets the stringent requirements of electronic device manufacturers, providing reliable and efficient performance in a wide range of electronic circuits.