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SMMUN2238LT1G

Part No SMMUN2238LT1G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PREBIAS NPN 0.246W SOT-23  /  Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr onsemi
Package Tape & Reel
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 246 mW
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number SMMUN2238
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 488-SMMUN2238LT1GTR,488-SMMUN2238LT1GCT,488-SMMUN2238LT1GDKR,SMMUN2238LT1G-ND
Standard Package 3,000
Win Source Part Number 969605-SMMUN2238LT1G
Ultra Librarian 3D Model Ultra Librarian SMMUN2238LT1G CAD Model

Description

Product Overview: SMMUN2238LT1G

The SMMUN2238LT1G, crafted by the reputable ON Semiconductor, is a high-performance PNP bipolar transistor designed to deliver efficient current regulation and amplification in a variety of electronic applications. This versatile component is a staple in the semiconductor industry, known for its reliability and robustness.

Key Features

  • Transistor Type: The SMMUN2238LT1G is a PNP (Positive-Negative-Positive) bipolar junction transistor (BJT), which means it is controlled by the flow of minority charge carriers in the device.
  • Voltage Ratings: This transistor is capable of withstanding collector-emitter voltages up to -60V, making it suitable for medium voltage applications.
  • Current Handling: It can handle continuous collector currents up to -600mA, allowing for substantial current flow through the device without compromising its integrity.
  • Power Dissipation: With a power dissipation capacity of 225mW, the SMMUN2238LT1G can manage a fair amount of energy without overheating, ensuring stable performance.
  • High Gain Bandwidth Product: It offers a transition frequency of 100MHz, which indicates a high-speed response suitable for amplification in RF applications.
  • Package: Enclosed in a small surface-mount SOT-23 package, this transistor is ideal for compact designs where space is at a premium.

Applications

The SMMUN2238LT1G is adept at performing in a diverse array of electronic circuits. Its primary applications include, but are not limited to:

  • Signal amplification in audio and video equipment
  • Switching operations in power management systems
  • Driver stages in amplifiers and regulators
  • Load management in battery-powered devices
  • General-purpose switching and amplification tasks

Quality and Environmental Compliance

ON Semiconductor ensures that the SMMUN2238LT1G adheres to stringent quality standards. The product is compliant with RoHS (Restriction of Hazardous Substances), reflecting the company's commitment to environmental sustainability and the reduction of harmful substances in electronic components.

Whether you're designing sophisticated audio equipment, energy-efficient power supplies, or any other application that requires a reliable PNP transistor, the SMMUN2238LT1G from ON Semiconductor is an excellent choice that combines performance with durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,140+ $0.0234 $50.0760
5,210+ $0.0192 $100.0320
8,065+ $0.0186 $150.0090
11,115+ $0.0180 $200.0700
14,370+ $0.0174 $250.0380
19,235+ $0.0156 $300.0660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,000 pieces
MOQ: 2140 pcs
Order Increment : 1 pcs
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