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SMUN5111DW1T1G

Part No SMUN5111DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 50V 0.1A SOT363 / Dual PNP Bias Resistor Transistors
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Packaging Reel
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Vce Saturation (Maximum) at Ib, Ic 250mV at 300nA, 10mA
Current - Collector Cutoff (Maximum) 500nA
DC Current Gain (hFE) (Min) at Ic, Vce 35 at 5mA, 10V
Power - Max 385mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Part Number Series MUN51**DW1T
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 806202-SMUN5111DW1T1G
Ultra Librarian 3D Model Ultra Librarian SMUN5111DW1T1G CAD Model

Description

ON Semiconductor SMUN5111DW1T1G Product Overview

The SMUN5111DW1T1G from ON Semiconductor is a high-performance, dual NPN and PNP bipolar transistor housed in a compact SOT-363 package. This small-signal transistor is designed for general-purpose amplifier and switching applications, offering a unique combination of features that enhance performance across a broad range of applications.

Key Features:

  • Transistor Type: The device features a complementary pair of transistors, with one NPN and one PNP transistor, allowing for versatile circuit designs.
  • Voltage Ratings: It can handle collector-emitter voltages of up to 50V for both the NPN and PNP transistors, providing a generous margin for varied electronic designs.
  • Current Handling: Both transistors are capable of a continuous collector current of 100 mA, making them suitable for moderate power handling applications.
  • Power Dissipation: With a power dissipation of 150 mW, this component can tolerate a moderate amount of heat in operation without degradation of performance.
  • High Gain Bandwidth Product: The device offers a transition frequency (fT) of 100 MHz for the NPN and 80 MHz for the PNP, providing good frequency response for amplification purposes.
  • SOT-363 Package: The compact, surface-mount SOT-363 package is space-efficient and ideal for high-density PCB designs.

Applications:

The SMUN5111DW1T1G is versatile and can be used in a variety of applications, including:

  • Signal amplification in audio, video, and other analog circuits.
  • Switching applications in digital and mixed-signal circuits.
  • Driver stages in amplifiers and other electronic devices.
  • Push-pull and other complementary circuits due to its NPN and PNP configuration.

This product is a testament to ON Semiconductor's commitment to providing reliable and efficient semiconductor solutions. The SMUN5111DW1T1G is RoHS compliant, ensuring adherence to environmental standards by avoiding the use of hazardous substances. With its robust design and versatile nature, this bipolar transistor is an excellent choice for designers seeking a reliable component that offers both NPN and PNP functionality in a single package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
885+ $0.0566 $50.0910
2,155+ $0.0465 $100.2075
3,335+ $0.0450 $150.0750
4,590+ $0.0436 $200.1240
5,940+ $0.0421 $250.0740
7,940+ $0.0378 $300.1320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 135,000 pieces
MOQ: 885 pcs
Order Increment : 1 pcs
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