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SMUN5112T1G

Part No SMUN5112T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr onsemi
Package Tape & Reel
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 202 mW
Mounting SMD (SMT)
Package / Case SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323)
Base Product Number SMUN5112
Other Names SMUN5112T1GOSTR,ONSONSSMUN5112T1G,SMUN5112T1GOSDKR,SMUN5112T1GOSCT,SMUN5112T1G,2156-SMUN5112T1G-OS
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278682-SMUN5112T1G
Ultra Librarian 3D Model Ultra Librarian SMUN5112T1G CAD Model

Description

ON Semiconductor SMUN5112T1G - NPN Bipolar Transistor

The SMUN5112T1G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This versatile transistor combines low voltage operation with high current handling, making it suitable for a wide range of electronic circuits.

Key Features:

  • Transistor Type: NPN - This transistor type is well-suited for amplification due to its high gain and efficiency.
  • Collector-Emitter Voltage (VCEO): 50V - The maximum voltage between the collector and emitter terminals when the base terminal is open-circuited.
  • Collector-Base Voltage (VCBO): 60V - The maximum voltage that can be safely applied between the collector and base terminals.
  • Emitter-Base Voltage (VEBO): 6V - The maximum voltage that can be applied between the emitter and base without causing damage.
  • Collector Current (IC): 1A - This current rating indicates the maximum continuous current the transistor can handle through the collector terminal.
  • DC Current Gain (hFE): 100 - A measure of the transistor's ability to amplify the input signal.
  • Power Dissipation (Pd): 1.5W - The maximum amount of power the transistor can dissipate without exceeding its maximum operating temperature.
  • Operating Temperature Range: -55°C to +150°C - The range of ambient temperatures over which the transistor can operate reliably.
  • Package / Case: SOT-23-3 - A compact, surface-mount package that is widely used in modern electronic designs for its space-saving benefits.

Applications:

The SMUN5112T1G transistor is ideal for a variety of applications, including but not limited to:

  • General-purpose switching and amplification
  • Driver stages in audio amplifiers
  • Signal processing
  • Power management functions
  • Voltage and current regulation circuits

With its robust design and reliable performance, the SMUN5112T1G from ON Semiconductor is a great choice for designers and engineers looking for an efficient and versatile NPN transistor for their electronic projects. Its SOT-23-3 package ensures compatibility with automated assembly processes, making it a practical choice for high-volume production.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,605+ $0.0360 $57.7800
3,910+ $0.0296 $115.7360
6,050+ $0.0286 $173.0300
8,335+ $0.0277 $230.8795
10,780+ $0.0268 $288.9040
14,425+ $0.0240 $346.2000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,010 pieces
MOQ: 1605 pcs
Order Increment : 1 pcs
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