ON Semiconductor SSV1MUN5313DW1T1 P-Channel MOSFET

The SSV1MUN5313DW1T1 is a high-performance P-Channel MOSFET from ON Semiconductor, renowned for its efficiency and reliability in a variety of applications. This MOSFET is designed to address the needs of designers looking for a component that offers low on-resistance, minimal gate charge, and a compact form factor for space-sensitive applications.

Key Features:

• Device Type: P-Channel MOSFET
• Configuration: Single
• Drain-to-Source Voltage (V_DS): -20 V
• Continuous Drain Current (I_D): -3 A
• Power Dissipation (P_D): 1.25 W
• Gate-to-Source Voltage (V_GS): ±8 V
• Static Drain-to-Source On-Resistance (R_DS(on)): 115 mΩ at V_GS = -4.5 V
• Minimum Gate Threshold Voltage (V_GS(th)): -1 V
• Operating and Storage Temperature Range: -55°C to +150°C

The SSV1MUN5313DW1T1 is optimized for switch mode power supply and power management systems, making it an ideal choice for consumer and industrial applications alike. Its low threshold voltage allows for operation with low gate drive sources, enhancing its versatility in various circuit designs.

Applications:

• Power Management
• Load Switch
• Battery Management
• DC/DC Converters
• Motor Control

With its robust design, the SSV1MUN5313DW1T1 ensures minimal conduction losses and provides excellent thermal performance, which is critical for maintaining reliability and longevity in electronic systems. The device is housed in a SC-70 package, which is highly valued for its small footprint on printed circuit boards (PCBs).

ON Semiconductor's commitment to quality means that the SSV1MUN5313DW1T1 is manufactured to the highest standards, ensuring consistent performance across a wide range of environmental conditions. Whether you're designing for portable electronics, power supplies, or any other application requiring a reliable P-Channel MOSFET, the SSV1MUN5313DW1T1 is an excellent choice to consider for your design needs.