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SZT1004T1G

Part No SZT1004T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description SS SOT223 GP XSTR SPCL TR / Bipolar (BJT) Transistor
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 3,000 pcs
MSL Level 3 (168 Hours)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 978503-SZT1004T1G
Ultra Librarian 3D Model Ultra Librarian SZT1004T1G CAD Model

Description

The SZT1004T1G is a versatile and robust NPN bipolar transistor from ON Semiconductor, a leading manufacturer of high-performance energy-efficient electronic components. This transistor is designed to cater to the demanding requirements of modern electronic circuits, providing reliable switching and amplification with a focus on energy efficiency.

Key Features

  • High Current Gain Bandwidth Product: The SZT1004T1G boasts a high fT, making it suitable for applications that require fast switching and high-frequency operation.
  • Low Collector-Emitter Saturation Voltage: This feature ensures minimal voltage drop during the saturation phase, leading to increased efficiency and reduced heat generation.
  • Surface Mount Package: The SOT-223 packaging allows for compact surface mount applications, making it ideal for space-constrained designs.
  • High Power Dissipation: With an impressive power dissipation capability, the SZT1004T1G can handle higher currents without compromising performance.
  • Pb-Free and RoHS Compliant: The device is manufactured with environmentally friendly materials, meeting the requirements for RoHS compliance.

Applications

The ON Semiconductor SZT1004T1G is suitable for a wide range of applications, including but not limited to:

  • Power Management Circuits
  • Switching Regulators
  • Motor Control Systems
  • Audio Amplifiers
  • Signal Processing

Technical Specifications

Parameter Value Collector-Emitter Voltage (Vceo) 40V Collector-Base Voltage (Vcbo) 60V Emitter-Base Voltage (Vebo) 6V Collector Current (Ic) 600mA DC Current Gain (hFE) 100 - 600 Power Dissipation (Pd) 1.5W Operating Temperature Range -55°C to +150°C

In conclusion, the SZT1004T1G from ON Semiconductor is a high-performance NPN bipolar transistor that delivers efficiency and reliability for a multitude of electronic applications. Its combination of high-speed operation, power efficiency, and compact form factor makes it an excellent choice for designers looking to optimize their circuit designs.

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