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TIP132G

Part No TIP132G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS NPN DARL 100V 8A TO220 / Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 2 W Through Hole TO-220
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Rohs State Need to verify
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Tube
Product Status Obsolete
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 3V @ 30mA, 6A
Current - Collector Cutoff (Max) 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V
Power - Max 2 W
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Base Product Number TIP132
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names ONSONSTIP132G,2156-TIP132G-ON
Standard Package 50
Win Source Part Number 1028657-TIP132G
Ultra Librarian 3D Model Ultra Librarian TIP132G CAD Model

Description

ON Semiconductor TIP132G Power Transistor

The TIP132G is a robust silicon NPN Darlington transistor designed and manufactured by ON Semiconductor, a leading provider in the semiconductor industry. This power transistor is specifically engineered for general-purpose amplifier and low-speed switching applications. It is highly regarded for its reliability and efficiency in managing high-current loads within a wide array of electronic devices.

Featuring a monolithic construction with built-in base-emitter shunt resistors, the TIP132G offers exceptional performance with a continuous collector current rating of up to 8 A and a collector-emitter voltage of 100 V. This makes it suitable for a variety of power regulation and amplification tasks. The device is housed in a TO-220 package, which ensures adequate heat dissipation and ease of mounting on printed circuit boards.

Key Specifications:

  • Collector-Emitter Voltage (VCEO): 100 V
  • Collector Current (IC): 8 A
  • Total Power Dissipation (Ptot): 70 W
  • DC Current Gain (hFE): 1000 (min) at IC = 3 A
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

The TIP132G is characterized by its high DC current gain, which means it can be driven by a relatively small base current, making it ideal for interfacing with microcontrollers and other logic-level devices. Its robustness is further enhanced by the inclusion of a built-in diode between the collector and emitter, which provides protection against reverse voltage transients.

Applications for the TIP132G are varied and include motor control circuits, power regulators, relay drivers, and other situations where a high-current, high-voltage switching capability is required. Its TO-220 package is universally recognized and appreciated by engineers for its ease of use and integration into a wide range of electronic systems.

ON Semiconductor's commitment to quality ensures that the TIP132G transistor meets the stringent requirements of the industry, providing a reliable and cost-effective solution for high-power switching applications. Whether you're designing a new circuit or troubleshooting an existing one, the TIP132G offers the performance and reliability that professionals trust.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1217 $63.6510
70+ $1.7417 $121.9190
105+ $1.6875 $177.1875
145+ $1.6320 $236.6400
185+ $1.5777 $291.8745
245+ $1.4149 $346.6505
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,230 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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