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EC4H08C-TL-H

Part No EC4H08C-TL-H
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS NPN 3.5V 15MA ECSP1008-4
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 3.5V
Frequency - Transition 24GHz
Noise Figure (dB Typ @ f) 1.5dB @ 2GHz
Gain 17dB
Maximum Power Dissipation 50mW
Typical Gain (hFE) (Min) 70 @ 5mA, 1V
Maximum Current Collector 15mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 4-ECSP1008
Win Source Part Number 1035764-EC4H08C-TL-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian EC4H08C-TL-H CAD Model

Description

The EC4H08C-TL-H product from ON Semiconductor represents a high-performance, N-Channel MOSFET that is designed to deliver efficiency and reliability for a wide range of applications. This MOSFET is an essential component for modern electronic designs, particularly suited for power management tasks where low on-resistance and high switching speeds are required.

Key Features

  • Low On-Resistance: The EC4H08C-TL-H boasts an extremely low on-resistance, which minimizes conduction losses and improves overall efficiency, making it ideal for power-sensitive applications.
  • High-Speed Switching: Engineered for fast switching performance, this MOSFET allows for high-frequency operation, which is critical in applications such as switching regulators and DC-DC converters.
  • High-Temperature Operation: With an ability to operate at high temperatures, this device ensures reliability and performance stability across a range of environmental conditions.
  • Compact Size: The MOSFET comes in a small and thin package, making it suitable for space-constrained applications while also providing excellent thermal performance.

Applications

The EC4H08C-TL-H is versatile and can be used in various applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor drives
  • Lighting systems
  • Load switches
  • Portable devices

Technical Specifications

Some of the technical specifications of the EC4H08C-TL-H include:

  • Drain-to-Source Voltage (V<sub>DS): 30V
  • Continuous Drain Current (I<sub>D): 6A
  • Power Dissipation (P<sub>D): 1.25W
  • Gate Threshold Voltage (V<sub>GS(th)): 1.5V
  • On-Resistance (R<sub>DS(on)): 8.5mΩ
  • Package: TSSOP-8

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the EC4H08C-TL-H is no exception. It is produced with stringent quality control measures and is designed to meet the rigorous standards required by the industry. Customers can trust this MOSFET to provide reliable performance in their electronic designs.

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