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STP4435M-TRG

Part No STP4435M-TRG
Manufacturer Others
Catalog Miscellaneous
Sample
Rohs State rohs
ECAD Module
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Manufacturer Others
Technical Support Please contact us for details.
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Win Source Part Number 347276-STP4435M-TRG
Ultra Librarian 3D Model Ultra Librarian STP4435M-TRG CAD Model

Description

The STP4435M-TRG is a P-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for high-efficiency power switching applications. It is manufactured using advanced planar technology, resulting in low on-resistance and fast switching speeds.

Applications:

  • Load Switching
  • DC-DC Conversion
  • Power Management in Portable Devices
  • Motor Control Circuits
  • Battery Management Systems

Features:

  • Low On-Resistance (RDS(on)): Minimizes power losses and improves efficiency.
  • Fast Switching Speed: Reduces switching losses and improves overall system performance.
  • Logic Level Gate Drive: Allows direct driving from microcontrollers and other logic devices.
  • High Avalanche Ruggedness: Provides added reliability in demanding applications.
  • RoHS Compliant: Environmentally friendly, meeting Restriction of Hazardous Substances directives.

Benefits:

  • Increased Energy Efficiency: Low RDS(on) minimizes power dissipation, leading to energy savings.
  • Improved System Performance: Fast switching speeds contribute to faster response times and better overall system performance.
  • Simplified Circuit Design: Logic level gate drive simplifies the interface with control circuitry.
  • Enhanced Reliability: High avalanche ruggedness ensures robust operation in harsh environments.
  • Environmentally Responsible: RoHS compliance contributes to a greener environment.

Additional Details:

The STP4435M-TRG typically comes in a surface-mount package, such as a SO-8 package, which allows for efficient heat dissipation and compact design. Key electrical characteristics include a drain-source voltage (VDS) rating, a gate-source voltage (VGS) rating, and a continuous drain current (ID) rating. These parameters are critical for selecting the appropriate MOSFET for a specific application. The device's thermal resistance (Rth) is also an important factor in determining its ability to dissipate heat effectively. Furthermore, its low gate charge (Qg) contributes to faster switching and reduced power consumption. Consult the datasheet for the specific values of these parameters to ensure proper application.

The STP4435M-TRG is suitable for various applications where efficient power switching is required. Its low on-resistance and fast switching speed make it a good choice for DC-DC converters, load switches, and motor control circuits. It is commonly used in portable devices, battery management systems, and other power-sensitive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
385+ $0.1513 $58.2505
930+ $0.1247 $115.9710
1,430+ $0.1213 $173.4590
1,985+ $0.1167 $231.6495
2,555+ $0.1132 $289.2260
3,410+ $0.1016 $346.4560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 41,600 pieces
MOQ: 385 pcs
Order Increment : 1 pcs
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