The 2SC4656J-R is a silicon NPN epitaxial planar transistor manufactured by Panasonic. This transistor is designed for low noise amplifier applications in the VHF and UHF bands. It offers excellent high-frequency performance and low noise characteristics, making it suitable for use in sensitive receiver circuits.

Applications

• Low-noise amplifiers (LNAs) in VHF and UHF receivers
• RF front-end amplifiers
• High-frequency oscillators
• Mixer circuits
• Communication equipment

Features

• Low Noise Figure: Typically 1.2 dB at 2 GHz.
• High Gain: Offers substantial gain at high frequencies.
• High Cutoff Frequency: Ensures excellent performance in high-frequency applications.
• Small Package: Available in a compact package for space-saving designs.
• NPN Silicon Epitaxial Planar Transistor: Provides reliable and consistent performance.

Benefits

• Improved Receiver Sensitivity: Low noise figure enhances the ability to detect weak signals.
• Enhanced Signal Amplification: High gain allows for effective signal boosting.
• Stable High-Frequency Performance: High cutoff frequency ensures consistent operation at desired frequencies.
• Compact Design: Small package allows for integration into densely populated circuit boards.
• Reliable Operation: Panasonic's quality ensures long-term stability and performance.

Technical Specifications

The 2SC4656J-R features a collector-emitter voltage (Vceo) typically around 12V, collector current (Ic) of 30mA, and a transition frequency (fT) in the GHz range. The noise figure is a key parameter, usually specified at 1.2 dB at 2 GHz. Detailed specifications can be found in the Panasonic datasheet for this transistor.