The MA3S795E is a silicon epitaxial planar type Schottky barrier diode manufactured by Panasonic. It is designed for high-speed switching and rectification applications, particularly in demanding environments. Its low forward voltage and fast reverse recovery time make it suitable for various RF and high-frequency circuits.

Applications

• High-speed switching circuits.
• Rectifiers in power supplies.
• RF detectors.
• Mixers in communication systems.
• Clamping diodes in digital circuits.

Features

• Low forward voltage (VF).
• Fast reverse recovery time (trr).
• Small package size for compact designs.
• High surge current capability.
• Excellent high-frequency characteristics.

Benefits

• Improved circuit efficiency due to low forward voltage drop, minimizing power loss.
• Faster switching speeds, enabling higher-performance circuits.
• Reduced space requirements in densely populated circuit boards.
• Robust performance in demanding environments, providing reliable operation.
• Enhanced signal detection and processing capabilities.

Technical Specifications: The MA3S795E typically features a forward voltage of around 0.35V and a reverse recovery time of less than 5ns. The maximum forward current is typically 100mA, and the reverse voltage is around 40V. It is available in a small SMD package (typically SOT-23 or similar), making it suitable for automated assembly. It is also RoHS compliant.