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Same model may have multiple batches, images only for reference.
UN511M-(TX) Real Image
Same model may have multiple batches, images only for reference.

UN511M-(TX)

Part No UN511M-(TX)
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 150MW SMINI3
Datasheet
UN511M-(TX) Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 80MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SMini3-G1
Win Source Part Number 053295-UN511M-(TX)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UN511M-(TX) CAD Model

Description

It has a maximum collector current of 100mA and a VCEO maximum collector-emitter breakdown voltage of 50V.

  • Transistor Polarity: PNP pre-biased
  • Resistor-Base (R1): 2.2k
  • Resistor-Emitter Base (R2): 47k
  • Maximum Power Dissipation: 150mW
  • Collector Cut-Off Current (Max): 500nA
  • Typical Gain (hFE) (Min): 80 @ 5mA, 10V
  • Maximum Vce (sat): 250mV @ 300μA, 10mA
  • Manufacturer Part Number: 053295-UN511M-(TX)

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