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Same model may have multiple batches, images only for reference.
UN521M-(TX) Real Image
Same model may have multiple batches, images only for reference.

UN521M-(TX)

Part No UN521M-(TX)
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 150MW SMINI3
Datasheet
UN521M-(TX) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SMini3-G1
Win Source Part Number 053310-UN521M-(TX)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UN521M-(TX) CAD Model

Description

The Panasonic Electronic Components 053310-UN521M-(TX) is a pre-biased NPN transistor designed for use in discrete semiconductor products.

  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 150mW
  • Typical Gain: 80 @ 5mA and 10V
  • Minimum Gain: 80 @ 5mA and 10V
  • Maximum Current Collector: 100mA
  • Collector Cut-off Current: 500nA
  • Maximum Vce (sat): 250mV @ 300μA and 10mA
  • Frequency Transition: 150MHz
  • Case/Package: SMini3-G1
  • Supply and Demand Status: balanced

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62+ $4.8873 $303.0126
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