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UNR211E00L

Part No UNR211E00L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW MINI3
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 60 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package Mini3-G1
Win Source Part Number 036055-UNR211E00L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR211E00L CAD Model

Description

The Panasonic Electronic Components UNR211E00L PNP-pre-biased transistor has a frequency transition of 150MHz and a resistor-base (R1) of 47k.

  • Frequency Transition: 150MHz
  • Resistor-Base (R1): 47k
  • Resistor-Emitter Base (R2): 22k
  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 250mV @ 300μA, 10mA
  • Collector Cut-Off Current (Max): 500nA
  • Typical Gain (hFE) (Min): 60 @ 5mA, 10V
  • Maximum Power Dissipation: 200mW
  • Category: discrete semiconductor products
  • Supply and Demand Status: balanced

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