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UNR511600L

Part No UNR511600L
Manufacturer Panasonic
Catalog RF Transistors (BJT)
Description TRANS PREBIAS PNP 150MW SMINI3  /  Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 150 MHz 150 mW Surface Mount SMini3-G1
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Panasonic Electronic Components
Package Tape & Reel
Product Status Obsolete
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 150 MHz
Power - Max 150 mW
Mounting SMD (SMT)
Package / Case SC-70, SOT-323
Supplier Device Package SMini3-G1
Base Product Number UNR511
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Other Names UNR511600LCT,UNR511600LDKR-NDR,UN5116-(TX),UN5116CT,UNR511600LTR-NDR,UNR511600LDKR,UN5116,UNR511600LTR,UN5116TR-ND,UN5116CT-ND,UNR511600LCT-NDR,UN5116TR,UN5116-TX
Standard Package 3,000
Win Source Part Number 1102372-UNR511600L
Ultra Librarian 3D Model Ultra Librarian UNR511600L CAD Model

Description

The Panasonic UNR511600L is a pre-biased PNP transistor that is designed for single, discrete semiconductor products.

  • Maximum power: 150mW
  • Voltage collector emitter breakdown: 50V
  • Current collector: 100mA
  • Transistor type: PNP pre-biased
  • Frequency transition: 150MHz
  • Package/case: SC-70, SOT-323
  • Resistor-base: 4.7 kOhms

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Pricing & Ordering

Quantity Unit Price Ext. Price
315+ $0.1839 $57.9285
770+ $0.1510 $116.2700
1,185+ $0.1462 $173.2470
1,635+ $0.1415 $231.3525
2,115+ $0.1368 $289.3320
2,825+ $0.1227 $346.6275
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,370 pieces
MOQ: 315 pcs
Order Increment : 1 pcs
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