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Same model may have multiple batches, images only for reference.
UNR52A3G0L Real Image
Same model may have multiple batches, images only for reference.

UNR52A3G0L

Part No UNR52A3G0L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 150MW SMINI3
Datasheet
UNR52A3G0L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SMini3-F2
Win Source Part Number 115152-UNR52A3G0L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR52A3G0L CAD Model

Description

The supply and demand status is balanced.

  • Win Source Part Number: 115152-UNR52A3G0L
  • Transistor Type: NPN - Pre-Biased
  • Maximum current collector: 80mA
  • Maximum power dissipation: 150mW
  • Package: SMini3-F2 case
  • Typical gain (hFE) (Min): 80 @ 5mA, 10V

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