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Same model may have multiple batches, images only for reference.
UNR921BG0L Real Image
Same model may have multiple batches, images only for reference.

UNR921BG0L

Part No UNR921BG0L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 125MW SSMINI3
Datasheet
UNR921BG0L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 100k
Typical Gain (hFE) (Min) 160 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 125mW
Mounting SMD (SMT)
Case / Package SSMini3-F3
Win Source Part Number 1116479-UNR921BG0L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR921BG0L CAD Model

Description

The Panasonic Electronic Components UNR921BG0L is an NPN pre-biased transistor.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Typical Gain (hFE): 160 @ 5mA and 10V
  • Package: SSMini3-F3
  • Mounting: Surface-Mountable
  • Status: Obsolete and end-of-life
  • Maximum Power Dissipation: 125mW
  • Collector Cut-off Current: 500nA
  • Resistor-Base (R1): 100k ohms
  • Resistor-Emitter Base (R2): None
  • Frequency Transition: 150MHz
  • Maximum Vce (sat): 250mV @ 300μA and 10mA
  • Supply and Demand Status: Balanced

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