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Same model may have multiple batches, images only for reference.
UNR92A4G0L Real Image
Same model may have multiple batches, images only for reference.

UNR92A4G0L

Part No UNR92A4G0L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 125MW SSMINI3
Datasheet
UNR92A4G0L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 125mW
Mounting SMD (SMT)
Case / Package SSMini3-F3
Win Source Part Number 1116482-UNR92A4G0L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR92A4G0L CAD Model

Description

The Panasonic Electronic Components UNR92A4G0L is an NPN pre-biased transistor with a maximum collector current of 80mA and a collector-emitter breakdown voltage of 50V.

  • Maximum Collector Current: 80mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 125mW
  • Typical Gain (hFE): 80 @ 5mA and 10V
  • Frequency Transition: 150MHz
  • Package: SSMini3-F3
  • Collector Cut-Off Current: 500nA
  • Maximum Vce (sat): 250mV @ 300μA and 10mA
  • Supply and Demand Status: Balance
  • Popularity Rating: Medium
  • Lifecycle Status: Obsolete (EOL)

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