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Same model may have multiple batches, images only for reference.
UP0439000L Real Image
Same model may have multiple batches, images only for reference.

UP0439000L

Part No UP0439000L
Manufacturer Panasonic
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP SSMINI6
Datasheet
UP0439000L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k, 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz, 80MHz
Maximum Power Dissipation 125mW
Mounting SMD (SMT)
Case / Package SSMINI6-F1
Win Source Part Number 053349-UP0439000L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UP0439000L CAD Model

Description

The Panasonic Electronic Components 053349-UP0439000L is a pre-biased dual NPN and PNP transistor, designed for use in discrete semiconductor products.

  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain: 80 @ 5mA, 10V
  • Maximum Power Dissipation: 125mW
  • Case/Package: SSMINI6-F1
  • Mounting Technology: SMD (SMT)
  • Frequency Transition: 150MHz and 80MHz
  • Collector Cut-Off Current: 500nA
  • Alternative Parts: EMD4DXV6T1G, DCX144EH-13, and UP04313
  • Supply and Demand Status: balanced

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