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PM25LV080B-100BCE

Part No PM25LV080B-100BCE
Manufacturer PMC-Sierra
Catalog HOT - SALES and EOL Components (N - P)
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Rohs State Need to verify
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Manufacturer PMC-Sierra
Win Source Part Number 277689-PM25LV080B-100BCE
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PM25LV080B-100BCE CAD Model

Description

The PM25LV080B-100BCE is an 8-Megabit, low voltage, Serial Flash memory device manufactured by PMC-Sierra. This specific part number denotes a certain packaging and speed grade within the PM25LV080B family. It features a SPI-compatible serial interface, enabling efficient storage in a compact form factor. This memory device is suitable for applications where a moderate amount of non-volatile storage is required, and power consumption is a concern.

Applications

  • Embedded Systems
  • Industrial Control
  • Consumer Electronics
  • Portable Devices
  • Data Logging

Features

  • 8-Megabit (1024K x 8) memory array
  • SPI Serial Interface
  • Low Voltage Operation (2.7V to 3.6V)
  • Fast Clock Operation (Up to 100MHz)
  • Write Protect Pin
  • Low Power Consumption
  • Small Package Options

Benefits

  • Space savings due to the small package size and reduced component count
  • Simplified integration with microcontrollers via the SPI interface
  • Extended battery life in portable devices
  • Prevention of accidental data corruption
  • High-speed data transfer capabilities

Technical Specifications

The PM25LV080B-100BCE operates with a single power supply voltage between 2.7V and 3.6V. It utilizes the SPI serial interface, supporting modes 0 and 3. The '100' indicates a maximum clock frequency of 100MHz. It features a page write buffer of 256 bytes for efficient write operations. Active current consumption is typically around 5mA, with a standby current of less than 5uA. Package options typically include SOIC. The operating temperature range is -40°C to +85°C.

The PM25LV080B-100BCE supports standard SPI protocols for reading, writing, and erasing data. It includes sector and bulk erase functionalities for efficient memory management. Typical write cycle time is 5ms. The device is RoHS compliant.

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