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Same model may have multiple batches, images only for reference.
UF3C120400K3S Real Image
Same model may have multiple batches, images only for reference.

UF3C120400K3S

Part No UF3C120400K3S
Manufacturer Qorvo US Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1200V 7.6A TO247-3 / N-Channel 1200 V 7.6A (Tc) 100W (Tc) Through Hole TO-247-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Qorvo
Package Tube
FET Type N-Channel
Technology SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 515mOhm @ 5A, 12V
Vgs(th) (Max) @ Id 6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 15 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 100 V
Power Dissipation (Max) 100W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number UF3C120400
Standard Package 30
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1351306-UF3C120400K3S
Ultra Librarian 3D Model Ultra Librarian UF3C120400K3S CAD Model

Description

The UF3C120400K3S is an N-channel SiCFET (Cascode SiCJFET) transistor designed for use in power electronics applications.

  • Channel Type: N-Channel
  • Type: SiCFET (Cascode SiCJFET)
  • Drain to Source Voltage (Vdss): 1200V
  • Power Dissipation: 100W (Tc)
  • Mounting Type: Through Hole
  • Package: TO-247-3
  • Supplier Device Package: TO-247-3
  • Vgs (Max): ±25V
  • Operating Temperature: -55°C to 175°C (TJ)
  • Manufacturer: Qorvo
  • ECCN: EAR99
  • MSL Level: Not Applicable
  • HTSUS: 8541.29.0095

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