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UJ3C065080K3S Qorvo
Same model may have multiple batches, images only for reference.

UJ3C065080K3S

Part No UJ3C065080K3S
Manufacturer Qorvo US Inc.
Catalog FETs - Single
Description MOSFET N-CH 650V 31A TO247-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1203808-UJ3C065080K3S
Manufacturer Qorvo
Category Discrete Semiconductor Products Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Package Tube
Product Status Active
FET Type N-Channel
Rds On (Max) @ Id, Vgs 111mOhm @ 20A, 12V
Vgs(th) (Max) @ Id 6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 15 V
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Ultra Librarian 3D Model Ultra Librarian UJ3C065080K3S CAD Model

Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultra low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application
requiring standard gate drive.

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8+ $12.8157 $102.5256
13+ $12.4152 $161.3976
17+ $12.0147 $204.2499
22+ $11.6142 $255.5124
29+ $10.4127 $301.9683
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