UJ4C075023K3S

Part No UJ4C075023K3S
Manufacturer Qorvo US Inc.
Catalog FETs - Single
Description 750V/23MOHM, SIC, CASCODE, G4, T
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202199-UJ4C075023K3S
Manufacturer Qorvo
Category Discrete Semiconductor Products- Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package Tube
Product Status Active
FET Type N-Channel
Technology N-Channel SiCFET (Cascode SiCJFET)
Operating Temperature -55°C ~ 175°C
Drain to Source Voltage (Vdss) 750 V
Mounting Type Through Hole
Supplier Device Package TO-247-3

Description

The Qorvo N-channel SiCFET is a single FET (Field-Effect Transistor) designed using SiC (Silicon Carbide) technology, specifically SiCJFET (Silicon Carbide Junction Field-Effect Transistor) cascode structure. With a drain-to-source voltage (Vdss) of 750V and an operating temperature range of -55°C to 175°C, this through-hole mounted transistor offers excellent performance in harsh environments. The TO-247-3 package ensures easy installation and reliability. With its active product status, the Qorvo N-channel SiCFET is a trusted choice for applications that require high voltage capabilities and ruggedness.

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