The Qorvo N-channel SiCFET is a single FET (Field-Effect Transistor) designed using SiC (Silicon Carbide) technology, specifically SiCJFET (Silicon Carbide Junction Field-Effect Transistor) cascode structure. With a drain-to-source voltage (Vdss) of 750V and an operating temperature range of -55°C to 175°C, this through-hole mounted transistor offers excellent performance in harsh environments. The TO-247-3 package ensures easy installation and reliability. With its active product status, the Qorvo N-channel SiCFET is a trusted choice for applications that require high voltage capabilities and ruggedness.