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2SC5336-T1

Part No 2SC5336-T1
Manufacturer Renesas Electronics America
Catalog RF Transistors (BJT)
Description NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
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Manufacturer Renesas Electronics America
Win Source Part Number 1125914-2SC5336-T1
Manufacturer Homepage www.renesas.com
Popularity Medium
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Ultra Librarian 3D Model Ultra Librarian 2SC5336-T1 CAD Model

Description

The 2SC5336-T1 is an NPN silicon bipolar junction transistor (BJT) manufactured by Renesas Electronics America. It is designed for high-frequency amplification and switching applications. This transistor is commonly used in RF amplifiers, oscillators, and high-speed switching circuits. Its key features include high gain, low noise, and fast switching speed, making it suitable for demanding electronic applications.

Applications:

  • RF amplifiers
  • Oscillators
  • High-speed switching circuits
  • Mixers
  • Frequency multipliers

Features:

  • NPN silicon BJT
  • High gain
  • Low noise figure
  • Fast switching speed
  • Small signal amplification

Benefits:

  • Provides efficient amplification in RF circuits
  • Enhances the sensitivity of communication devices
  • Enables high-speed switching in digital circuits
  • Improves overall system performance
  • Reliable performance in demanding environments

Technical Specifications (Typical):

  • Collector-Base Voltage (VCBO): 25 V
  • Collector-Emitter Voltage (VCEO): 12 V
  • Emitter-Base Voltage (VEBO): 3 V
  • Collector Current (IC): 100 mA
  • Collector Dissipation (PC): 200 mW
  • Transition Frequency (fT): 7 GHz
  • Noise Figure: 1.5 dB (at 1 GHz)

The 2SC5336-T1 is typically packaged for surface mount technology (SMT), facilitating easy integration into modern electronic assemblies. Its high transition frequency ensures that it can effectively amplify signals in the gigahertz range. The low noise figure is crucial for maintaining signal integrity in sensitive receiver applications. Its fast switching speed makes it suitable for use in high-speed digital circuits, such as those found in computers and communication equipment. The transistor is designed to operate over a wide temperature range, making it suitable for both indoor and outdoor environments. Its robust construction and electrical characteristics make it a reliable component in a wide range of RF and high-speed applications. It ensures efficient amplification with minimal signal loss. The transistor is also designed for low intermodulation distortion, which is critical in communication systems to maintain signal integrity.

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