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Same model may have multiple batches, images only for reference.
SPI42N03S2L-13 Real Image
Same model may have multiple batches, images only for reference.

SPI42N03S2L-13

Part No SPI42N03S2L-13
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 42A I2PAK
Datasheet
SPI42N03S2L-13 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 37μA
Max Gate Charge 30.5nC @ 10V
Max Input Capacitance 1130pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 12.9 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3-1
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 065942-SPI42N03S2L-13
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPI42N03S2L-13 CAD Model

Description

The Infineon Technologies 065942-SPI42N03S2L-13 is an N-Channel MOSFET designed for discrete semiconductor products.

  • GPTDescription: It is a through-hole mounting technology with a maximum power dissipation of 83W (Tc).
  • GPTDescription: The temperature range for operating this product is -55°C to 175°C (TJ).
  • GPTDescription: It has a maximum gate-source voltage of ±20V and a maximum Rds On of 12.9 mOhm @ 21A, 10V.
  • GPTDescription: The Infineon Technologies 065942-SPI42N03S2L-13 has a gate-source threshold voltage of 2V @ 37μA and a maximum gate charge of 30.5nC @ 10V.
  • GPTDescription: This MOSFET has a sufficient supply and demand status and is a medium popular choice.

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