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2SK3484-AZ

Part No 2SK3484-AZ
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V MP-3/TO-251
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 20nC @ 10V
Max Input Capacitance 900pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 125 mOhm @ 8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-251 (MP-3)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 8583-2SK3484-AZ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK3484-AZ CAD Model

Description

2SK3484-AZ MOSFET

The 2SK3484-AZ N-channel MOSFET is designed for superior performance in power management applications. It offers excellent efficiency and reliability, making it an ideal choice for power-intensive and precision-demanding electronic circuits.

Applications and Projects:

  • Telecommunications equipment
  • Automotive electronics
  • Robotic systems
  • Uninterruptible power supplies (UPS)
  • Solar inverters

Features and Benefits:

  • Efficient Energy Utilization: Its low R<sub>DS(on) minimizes power dissipation, enhancing energy management.
  • Fast Switching Times: Improves system performance by handling rapid changes effectively.
  • Robust Design: Built to endure high voltage/current environments, ensuring durability.
  • Compact Footprint: The compact design allows for efficient use of space in circuit boards.
  • Compliant with Industry Standards: Ensures safety and compatibility with existing systems.

Additional Details:

With its TO-220 package, the 2SK3484-AZ is not only easy to handle during manufacturing but also offers excellent thermal conductance. This, combined with its high gate threshold voltage, allows it to be used effectively in high-frequency circuits, reducing the chance of thermal runaway and contributing to the longevity of electronic devices.

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Shipped from HK warehouse
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