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Same model may have multiple batches, images only for reference.
2SK4178-ZK-E1-AY NEC
Same model may have multiple batches, images only for reference.

2SK4178-ZK-E1-AY

Part No 2SK4178-ZK-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description 2SK4178 - SWITCHING N-CHANNEL PO
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 10 V
Power Dissipation (Max) 1W (Ta), 33W (Tc)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package TO-252 (MP-3ZK)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 1 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 545089-2SK4178-ZK-E1-AY
Ultra Librarian 3D Model Ultra Librarian 2SK4178-ZK-E1-AY CAD Model

Description

The 545089-2SK4178-ZK-E1-AY is a N-Channel MOSFET transistor.

  • Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
  • Package: Bulk
  • Standard Package: 1 piece
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id) @ 25°C: 48A
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
  • Gate-Source Threshold Voltage (Vgs(th)) @ Id: 2.5V @ 250µA
  • Power Dissipation: 1W (Ta), 33W (Tc)
  • Temperature: 150°C

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