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Same model may have multiple batches, images only for reference.
H7N1004FM-E
Same model may have multiple batches, images only for reference.

H7N1004FM-E

Part No H7N1004FM-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 100V 25A 3-Pin(3+Tab) TO-220FM Tube
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Continuous Drain Current (ID) 25 A
Gate to Source Voltage (Vgs) 20 V
Lead Free Yes
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Packaging Rail/Tube
Power Dissipation 25 W
RoHS Non-Compliant
Win Source Part Number 1028066-H7N1004FM-E
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian H7N1004FM-E CAD Model

Description

The Renesas Electronics America H7N1004FM-E is a transistor with a power dissipation of 25 W and a maximum operating temperature of 150 °C.

  • Power Dissipation: 25 W
  • Maximum Operating Temperature: 150 °C
  • RoHS: Non-Compliant
  • Lead-Free: Yes
  • Mounting Type: Through-Hole
  • Supply and Demand Status: Shortage
  • Continuous Drain Current: 25 A
  • Gate to Source Voltage: 20 V

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